A Quantitative Study on Key Parameters for the Deposition of Parylene C to Achieve 1–2 μm Coatings

Author(s):

S. Gary Hirsch and J. Derek Demaree

Abstract:

We demonstrate that by controlling three key parameters (i.e., sublimation temperature of the precursory dimer powder, sample temperature, and deposition time), thin layers of Parylene C can be deposited from 45 µm down to approximately 125 nm onto silicon wafer samples. We also show the effects of varying these parameters independently and in combination. Thickness measurements were carried out via mechanical profilometry and Rutherford backscattering spectrometry.