Standard Operating Procedure for On-Chip Porous Silicon Surface Functionalization

Author(s):

Nathan A Banek and Wayne A Churaman

Abstract:

A standard operating procedure for a Schlenk line, degassing solvents by the freeze–pump–thaw method, and porous silicon (pSi) functionalization is detailed. On-chip pSi devices were prepared by anodic etching in 3:1 hydrofluoric acid: ethanol (v/v) solution and subsequently functionalized with 1-octene by thermal hydrosilylation. The chips demonstrated good protection from ambient air moisture.