Damage Assessment of InGaP-based Power Devices Exposed to Simulated Alpha Radiation
Report Number:
ARL-TR-9742
Publish Date:
August 15, 2023
Distribution:
Approved for public release: distribution is unlimited.
Author(s):
Nicholas P Barbieri, Marc Litz, John Derek Demaree, Muhammad R Khan, LeighAnn Larkin, Michael Restaino, Michael Wraback, and Vijay Parameshwaran
Abstract:The effects of radiation damage on an indium gallium phosphide (InGaP) betavoltaic PIN diode and a zinc sulfide/InGaP beta photovoltaic structure were evaluated by exposing both materials to a beam of 4.5-MeV helium ions as a surrogate for exposure to alpha particles. These measured results will influence the choice of semiconductor and phosphor materials for use in long-lived radioisotope power sources.
File Size:
2 MB