Sub-Millisecond Pulse Power Evaluation of High-Voltage Silicon Carbide (SiC)Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and High Voltage SiC Insulated Gate Bipolar Transistor (IGBT)

Author(s):

Aderinto Ogunniyi, Heather O’Brien, and Miguel Hinojosa

Abstract:

This work presents the pulse evaluation and characterization of a 10-kV silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) and 27-kV SiC insulated gate bipolar transistor (IGBT). These devices are ideal for high-voltage, fast-switching, and high-power density electronic applications due to their superior material properties compared with their silicon counterpart. The static and transient performance of these devices were investigated and reported. The goal of the evaluation is to assess the sub-millisecond pulse current handling capabilities of these power devices.